At the Technological Physics group of the Institute of Nanostructure Technologies and Analytics of the University of Kassel, Germany, there are three Ph.D. positions open on topics related to self-assembled growth of III-V quantum dot structures (nanomaterials) and optoelectronic device development based on nanostructure processing (nanophotonics).
The resources at the Institute of Nanostructure Technologies and Analytics include 400 sqm clean room facilities with semiconductor process technology and about 400 sqm additional laboratory space. For the above mentioned topics a double chamber molecular beam epitaxy (Veeco Gen II) is available. One chamber is currently dedicated for GaAs based and the other for InP-based epitaxy, respectively. A new ICP reactive ion etcher has been recently installed for the nanostructure processing. There is access to electron beam lithography and dry/wet etch technology including PECVD, RIE, IBD systems as well as to characterization tools (SEM, AFM, STM, XRD, ellipsometry, etc.). For optical material characterization there is access to low-temperature PL and transmission measurements as well as to device charaterization set-ups.
1 Ph.D. position for III/V epitaxy mainly focussing on self-assembly techniques of InAs quantum dots on materials lattice matched to InP. The major goal here is to investigate and optimise the formation process and optical properties of quantum dots emitting in the wavelength range of 1.55 µm. These nanoscaled structures should be also applied to optoelectronic devices, like lasers or amplifiers, with very unique properties.
1 Ph.D. position for III/V epitaxy mainly focussing on self-assembly techniques of III-V quantum dots on silicon. Here, basic growth studies should be performed to establish a fabrication technology for efficient light emitting material on silicon. For this purpose, also silicon process technology can be applied, e.g., for pre-patterning of surfaces, etc. The growth should be performed in an InP growth chamber where an additional Si source will be installed.
1 Ph.D. position for micro-photoluminescence (μ-PL) high-resolution spectroscopy of In(Ga)(Al)As self-assembled quantum dots grown on various non-patterned or pre-patterned semiconductor substrates such as GaAs, InP or Si. The candidate is expected to carry out active scientific research of optical properties of the investigated materials in correlation with their electronic and structural properties. For this purpose a temperature variable (4-300 K) high-resolution μ-PL set-up with ex-situ fine control of the cryostat position will be soon available.
Preliminary closing date for above positions: 15.06.2008
The applicants for the Ph.D. positions should have a diploma / master degree in physics, nanosciences, electrical engineering or equivalent degrees. We are seeking for highly motivated people who like to work on technology related tasks within the transition region of basic and applied research.
More informations, please contact with Prof. Reithmaier.
Applications should be sent to Prof. Dr. Johann Peter Reithmaier, Technische Physik, INA, Heinrich-Plett-Str. 40, D-34132 Kassel, Germany. Contact via Tel.: +49-561-804-4430 and Email: jpreith@uni-kassel.de. Further information on the Internet: www.ina.uni-kassel.de
January
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